Tencent digital hearing (Mangofish) how many next-generation memory read speed will be faster than it is now? Researchers from Stanford University in the United States believe that phase-change memory (PCM) is likely to be 1000 times faster than current DRAM memory performance.
In fact, phase change memory is nothing new. Technology giants such as IBM and Intel have already begun research and development of phase change memory. The general principle is to use a special substance to change from amorphous to crystalline state. The characteristics, in order to store digital information, but the shortcomings of this technology is that there is a significant delay in the phase change process, and this is crucial for the access speed of phase change memory.
The latest research results from Stanford University show that in the case of an electrical pulse of 0.5 THz intensity, only a few picoseconds (1 second equals 1012 picoseconds) of phase change memory can produce crystalline fibers for storing data, although most of the rest remains It is in an amorphous state, but based on the above experimental results, it can be considered that the phase change process of the phase change memory is basically at the picosecond level, while the current DRAM (1 second equals 109 picoseconds) is measured in nanoseconds. It is a 1000-fold difference (1 nanosecond equals 103 picoseconds), which means that the storage speed of the phase change memory can theoretically be up to 1000 times that of the DRAM memory while the energy consumption is low and the data will not be lost after the power failure.
Prof. Aaron Lindenberg said that although the research results are very basic, they are full of promise. The phase change memory with lower power consumption and faster speed may not be very far.
Source: Digital Trends
.wxdigi { padding:20px 0; border-top: 1px dotted DBDBDB; }