Samsung 28nm FD-SOI Starts Production

Two days ago, Fast Technology had reported that Chinese scientist Hu Zhengming had just been awarded the highest technology award in 2015 by President Barack Obama. As a leader in the semiconductor industry, he said in an interview that when the end of 25nm was seen, the US government had solicited proposals from the industry. Professor Hu later proposed FinFET and UTB-SOI (FD-SOI). The former is very familiar to us. The Chinese name is "fully depleted insulating silicon."

The technically simple distinction is that the FinFET is a stereo transistor while the FD-SOI is still planar.

Although 1Xnm has entered the consumer sector, 20nm is far from the point of exiting the market, and there is still a large amount of product demand.

According to foreign media reports, Samsung LSI business director Kelvin Low said that they and STMicroelectronics 28nm FD-SOI has started production, French semiconductor company Soitec SA provides SOI substrate materials.

The biggest highlight of FD-SOI is ultra-low power consumption, especially compared to HKMG (back gate, about 50%+), and now embedded development of Internet of Things (IoT), automotive, etc. is very sensitive to this feature of the chip. Calcart and others clearly expressed their support and waited for the release.

Of course, it is worth mentioning that Samsung's "good friend" GlobalFoundries, they launched the world's first 22nm FD-SOI in July, the voltage to achieve the industry's lowest 0.4V, leading Samsung for one year.

GF is now in poor condition and is often reportedly acquired. If the 22nm FD-SOI is not available next year, it is very likely that Samsung will directly become angry when it comes to "receiving disk man."