Overview With the release of the DS32X35 series, Maxim is able to provide non-volatile memory without batteries. These devices use ferroelectric random access memory (FRAM) technology, FRAM is a non-volatile memory, and its read / write operations are similar to RAM. This series of devices can reliably maintain data for 10 years. Unlike EEPROM and other non-volatile memories, it does not need to consider the complexity, excessive overhead, and reliability of the system. Since the emergence of the first FRAM in 1992, this technology has become mature. There are three main types of non-volatile storage technology: battery-backed SRAM, EEPROM, and flash memory. In terms of non-volatile storage speed, FRAM is similar to traditional SRAM; FRAM operation is similar to serial EEPROM, the main difference is that it has better write operation characteristics and durability. Can read or write to the memory at the speed of the I²C interface. During the write operation, there is no need to poll the device to confirm the ready condition.
Table 1 shows the evaluation of non-volatile memory technology, with rating levels 1 (best) to 4 (worst).
Table 1. Technical assessment of non-volatile memory
| Features | Battery-Backed SRAM | EEPROM | Flash | FRAM |
| Read Speed | 1 | 4 | 2 | 1 |
| Write Speed | 1 | 4 | 4 | 1 |
| Power ConsumpTIon | 3 | 4 | 4 | 1 |
| Memory Density | 2 | 4 | 1 | 4 |
| Ease of Use | 2 | 3 | 4 | 1 |
| Endurance | 1 | 3 | 4 | 1 |
The second advantage is the durability of write operations, with up to 10 billion writes. Most EEPROM writes only reach 1 million times. In fact, it can be considered that FRAM has no limit on the number of writes, which is very suitable for data acquisition applications.
The third advantage is micro power consumption, which helps to save power. FRAM uses a ferroelectric storage mechanism, which can support write operations through local VCC, and EEPROM requires a charge pump or boost circuit. This shows that the current consumption of FRAM is much lower than that of EEPROM of similar configuration. The DS32X35 high-precision RCTCS32X35 with FRAM is a temperature-compensated clock / calendar chip that integrates a 32.768kHz crystal and nonvolatile memory in a single package. Non-volatile memory uses two configurations: 2048 x 8 bits or 8192 x 8 bits. The device is available in a 20-pin, 300mil SO package. DS32X35 includes a FRAM area, which can maintain the memory contents without battery backup. In addition, this series of devices can perform read and write operations indefinitely. During the effective use period of the product, unlimited memory access is allowed, and there is no wear and tear.
Other features of this series of devices include: two timed alarms, optional interrupt or programmable square wave output, and a calibrated 32.768kHz square wave output. The reset input / output pin provides a power-on reset function. In addition, the reset pin can also be used as a key control input to externally generate a reset. RTC and FRAM are accessed via the I²C serial port. The address requires the serial FRAM memory to provide a 2048 x 8-bit or 8192 x 8-bit memory array, accessed through the I²C interface. Due to different array configurations, different versions of the DS32X35's I²C addressing technology are also different. Table 2 details the addressing requirements for different versions of DS32X35.
Table 2. Memory slave addresses
| Part | Memory (kB) | Slave Address | Address Cycle 1 | Address Cycle 2 |
| DS32B35 | 2 | 1010 A10A9A8R | A7A6A5A4 A3A2A1A0 | N / A |
| DS32C35 | 8 | 1010 000R | XXXA12 A11A10A9A8 | A7A6A5A4 A3A2A1A0 |
R = read and write selection bits; X = don't care; AN = address of the Nth bit Conclusion The new DS32X35 series products have precise timing functions, integrating four separate devices into a single chip. Figure 1 shows the internal block diagram of the DS32X35 with integrated RTC, nonvolatile memory, system reset, and 32.768kHz crystal.
Figure 1. DS32X35's high integration advantages
Antenk dip plug connector Insulation Displacement termination connectors are designed to quickly and effectively terminate Flat Cable in a wide variety of applications. The IDC termination style has migrated and been implemented into a wide range of connector styles because of its reliability and ease of use. Click on the appropriate sub section below depending on connector or application of choice.the pitch range from 1.27mm,2.0mm, and 2.54mm here.
IDC DIP Plug Connectors Key Specifications/Special Features:
Materials:
Insulator: PBT, glass reinforced, rated UL94V-0
Contact: phosphor bronze or brass
Electrical specifications:
Pitch: 1.27/2.0/2.54mm
Current rating: 1A, 250V AC
Contact resistance: 30M Ohms (maximum)
Insulation resistance: 3,000M Ohms, minute
Dielectric withstanding voltage: 500V AC for one minute
Operating temperature: -40 to +105 degrees Celsius
Terminated with 1.27mm pitch flat ribbon cable
Number of contacts: 06,08, 10, 12, 14, 16, 20, 24, 26, 30, 32,34, 40, 50, 60 and 64P
With RoHS mark
Used for ribbon cables
DIP Plug Connectors Application
Wire to Board
Apply to Industries : PC, IPC, Consumer Electronics, Automotive, Home Appliance, Medical
Dip Connector,Dip Plug Connector,Dip Direct Pulg Connector,IDC Plug Connector,Idc connector dip plug,1.27mm Dip Plug Connector,2.0mm Dip Plug Connector, and 2.54mm Dip Plug Connector
ShenZhen Antenk Electronics Co,Ltd , https://www.antenk.com