On June 5th, Ai Siqiang announced that Hua Yanxin (Beijing) Technology Co., Ltd. ordered a MOCVD system, a 69x2 inch wafer size CRIUS® II-L reactor, which will be used for the production of gallium nitride based Epitaxial chip for ultra-high brightness LED.
The reactor order was received in the fourth quarter of 2011 and was delivered in the second quarter of 2012. Huayan said that CRIUS® technology is cost-effective and can be seamlessly and quickly combined with the production process. The CRIUS® II-L reactor meets the high output requirements of its nitride chip materials.
The reactor order was received in the fourth quarter of 2011 and was delivered in the second quarter of 2012. Huayan said that CRIUS® technology is cost-effective and can be seamlessly and quickly combined with the production process. The CRIUS® II-L reactor meets the high output requirements of its nitride chip materials.
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