Comparable to DDR4: Samsung Develops 1.25V Ultra Low Voltage DDR3 Memory

Samsung Electronics announced today that it has successfully developed a green version of the DDR3 RDIMM memory module with a voltage of only 1.25V, while the standard version of DDR3 has a voltage of 1.5V and the low voltage version also has 1.35V.

Even the next-generation memory standard DDR4, which is under development, has an expected voltage of only 1.2V.

Samsung's ultra-low-voltage memory modules use a memory chip with a 30-nm class process, with a single-capacity 4Gb (512MB) and a maximum operating frequency of 1333MHz. If it is a 16GB capacity, the overall power consumption will be only 3.7W, compared to the same process, the same capacity of 1.35V low voltage version can save about 15%, compared to 40nm process, 2Gb particles can save 60% of the many.

Samsung plans to start Volume production after OEM certification. The entire capacity is available in 4GB, 8GB and 16GB versions. It is expected that large-scale data center and enterprise server systems will be introduced next year, especially those requiring ultra-low-power servers. .

Unfortunately, desktop users cannot enjoy it.