1. Definition and characteristics of MB chip
definition:
MB chip: Metal Bonding (metal bonding) chip; this chip is a patented product of UEC
Features:
1. The material with high heat dissipation coefficient-Si is used as the substrate, and the heat dissipation is easy.
Thermal Conductivity
GaAs: 46 W / mK
GaP: 77 W / mK
Si: 125 to 150 W / mK
Cupper: 300 ~ 400 W / mk
SiC: 490 W / mK
2. Wafer bonding the epitaxial layer and the substrate through a metal layer, while reflecting photons, to avoid absorption of the substrate.
3. The conductive Si substrate replaces the GaAs substrate, has good thermal conductivity (the thermal conductivity difference is 3 ~ 4 times), and is more suitable for the field of high driving current.
4. The bottom metal reflective layer is conducive to the improvement of light and heat dissipation
5. The size can be increased and used in the field of High power, eg: 42mil MB
2. Definition and characteristics of GB chip
definition:
GB chip: Glue Bonding (adhesive bonding) chip: This chip is a UEC patented product
Features:
1: The transparent sapphire substrate replaces the light-absorbing GaAs substrate, and its light output power is more than twice that of the traditional AS (Absorbable structure) chip. The sapphire substrate is similar to the GaP substrate of the TS chip.
2: The chip emits light on all four sides, with an excellent pattern
3: In terms of brightness, the overall brightness has exceeded the level of the TS chip (8.6mil)
4: Dual electrode structure, its high current resistance is slightly worse than TS single electrode chip
3. TS chip definition and characteristics
definition:
TS chip: Transparent structure (transparent substrate) chip, which belongs to HP's patented product.
Features:
1. The chip manufacturing process is complicated, much higher than AS LED
2. Excellent reliability
3. Transparent GaP substrate, no light absorption, high brightness
4. Widely used
4. AS chip definition and characteristics
definition:
AS chip: Absorbable structure (absorbable substrate) chip: After nearly 40 years of development efforts, the R & D, production, and sales of this type of chip in the Taiwan LED optoelectronic industry are at a mature stage, and the major companies ’R & D level in this regard is basically At the same level, the gap is not large.
The mainland chip manufacturing industry started late, and its brightness and reliability still have a certain gap with the Taiwan industry. Here we are talking about the AS chip, especially the UE chip AS chip, eg: 712SOL-VR, 709SOL-VR, 712SYM- VR, 709SYM-VR, etc.
Features:
1. The quaternary chip is prepared by MOVPE process, the brightness is brighter than the conventional chip
2. Excellent reliability
3. Widely used
LED chip material epitaxial type
1. LPE: Liquid Phase Epitaxy (Liquid Phase Epitaxy) GaP / GaP
2. VPE: Vapor Phase Epitaxy (gas phase epitaxy) GaAsP / GaAs
3. MOVPE: Metal Organic Vapor Phase Epitaxy (AlGaInP, GaN)
4. SH: GaAlAs / GaAs Single Heterostructure (single-shaped structure) GaAlAs / GaAs
5. DH: GaAlAs / GaAs Double Heterostructure, (double-shaped structure) GaAlAs / GaAs
6. DDH: GaAlAs / GaAlAs Double Heterostructure, (double-shaped structure) GaAlAs / GaAlAs
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